Chaoyu Chen
Associate Researcher

Essential Information

Name:Chaoyu Chen

Position:Associate Researcher

Highest Degree:Doctor of Philosophy in Physics



Research Field:Electronic structure of quantum materials, angle-resolved photoemission spectroscopy

Educational Background

2008.09-2013.07, Ph.D. in Physics, Institute of Physics, Chinese Academy of Science.

2004.09-2008.06, B.S. in Applied Physics, Central South University

Working Experience

2018.10- present Associate Researcher, Southern University of Science and Technology

2015.03-2018.10 Beamline Scientist. French National Synchrotron Facility

2013.09-2015.02 PostDoc. French National Synchrotron Facility

Papers and Patents Highlight

(8). Chen, Y. et al. Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy. Advanced materials 30, e1800754, doi:10.1002/adma.201800754 (2018).

(7). Chen, C. et al. Emergence of interfacial polarons from electron-phonon coupling in graphene/h-BN van der Waals heterostructures. Nano letters 18, 1082-1087 (2018).

(6). Chen, C. et al. Chemical and electronic structure imaging of graphene on Cu: a NanoARPES study. Journal of Physics: Condensed Matter 29, 183001 (2017).

(5). Bian, G. et al. Experimental Observation of Two Massless Dirac-Fermion Gases in Graphene-Topological Insulator Heterostructure. 2D Materials 3, 021009 (2016).

(4). Chen, C. et al. Observation of a two-dimensional liquid of Frohlich polarons at the bare SrTiO3 surface. Nature communications 6 (2015).

(3). Xie, Z. et al. Orbital-selective spin texture and its manipulation in a topological insulator. Nature communications 5, 3382 (2014).

(2). Chen, C. et al. Tunable Dirac fermion dynamics in topological insulators. Scientific reports 3, 2411 (2013).

(1). Chen, C. et al. Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment. Proceedings of the National Academy of Sciences 109, 3694-3698 (2012).