Dr. Huaiyu Ye is currently an associate professor and doctoral supervisor at the Southern University of Science and Technology, School of Microelectronics. He is also the Principal Investigator of Shenzhen Third Wide-band Gap Semiconductor Institute. Dr. Ye is committed to the development and application of new materials for third-generation semiconductor power electronic device packaging interconnection, thermal management and energy management, testing mechanism and application, non-equilibrium thermodynamics of high-power high-frequency semiconductor devices, development and application of new semiconductor sensors and packages and research in energy management and sustainable applications in electronic device modules and systems.
June 2010 – October 2014, Ph.D., Institute of Microsystems and Nanoelectronics, Delft University of Technology, The Netherlands
September 2007 – October 2009, Master of Science, Chemical and Energy Laboratory, Delft University of Technology, The Netherlands
September 2003 – June 2007, Bachelor of Engineering, School of Mechanical and Power Engineering, Shanghai Jiaotong University
July 2019 to present, Associate Professor, Southern University of Science and Technology, Ph.D.
August 2018, Shenzhen Wide-band Gap Semiconductor Institute, Packaging Principal Investigator
June 2016 to May 2019, Professor of the “Hundred Talents Program” of Chongqing University
January 2015 to May 2016, Researcher of National Key Laboratory of Semiconductor Lighting Joint Innovation
June 2010 to June 2014, Researcher of the Netherlands Academy of Applied Sciences and Researcher of the European Institute of Innovation Materials
August 2011, the Outstanding Paper Award at the ICEPT-HDP Conference.
November 2017, the third generation semiconductor industry technology innovation strategic alliance (CASA) outstanding innovation youth.
The 3rd Annual Semiconductor Industry Technology Innovation Strategic Alliance (CASA) 2018 Alliance Contribution Award.
- Member of the Academic Committee of EuroSimE, ICEPT, SSLCHINA and IFWS International Conference; member of the Committee of the Forbidden Band Power Semiconductor Technology Blueprint (ITRW), who participated in the EU's major special ENIAC Joint Undertaking "Consumerizing Solid State Lighting", European Materials Research Institute (m2i) Project leader, (27 million euros, 21 European companies & institutes, such as Philips, CEA-Leti, Cambridge, TUDelft).
- Published more than 60 papers in international academic journals and international conferences in the academic field, including 37 SCI papers, 2 ESI-1% high-cited papers, and 8 microelectronics top-level magazines IEEE EDL papers. The first author or correspondent author published 18 papers in the Journal Citation Report (JCR Q1).
- For the first time, the non-equilibrium thermodynamics research applied in the field of semiconductor research was proposed internationally. The article was published continuously on IEEE EDL. The reviewer's evaluation opinion was "very innovative R&D work", and the thermal sensitivity of non-equilibrium thermodynamics was also obtained. The first National Natural Science Foundation.
- Invited to be a reviewer of more than 10 internationally renowned journals such as IEEE Electric Devices Letters, IEEE Transactions on Electron Devices, Nanoscale, International Journal of Heat and Mass Transfer, Applied Thermal Engineering. At the same time, hehas also committed to semiconductor devices and testing, the industrialization of sensors, and got more than 10granted patents. He realized the commercial application of multiple sets of equipment, and has played a strong supporting role for the 863 project. He has undertaken more than 10 research projects and talent programs at home and abroad.
Huiru Yang, Zeping Wang, Huaiyu Ye*, Kai Zhang, Xianping Chen, Guoqi Zhang, Promoting sensitivity and selectivity of HCHO sensor based on strained InP3 monolayer: A DFT study, Applied Surface Science (459), 2018-11-30, 554-561. (2017 JCR Impact Factor:4.439,Q1)
H Ye, FF Hu, H Tang, L Yang, X Chen*, LG Wang, G Zhang, Germanene on single layer ZnSe substrate: Novel electronic and optical properties, Physical Chemistry Chemical Physics 20 (23), 2018-05-14, 16067-16076. (2017 JCR Impact Factor:3.906,Q1)
P Zhang, X Yang, W Wu, L Tian, H Cui, K Zheng, J Jiang, X Chen, H Ye*, Tunable electronic properties of silicene/GaP heterobilayer: Effects of electric field or biaxial tensile strain, Chemical Physics Letters 700, 2018-05-16, 114-121. (2017 JCR Impact Factor: 1.686,Q3)
P Zhang, X Yang, W Wu, L Tian, D Xiong, H Cui, X Chen, K Zheng*, H Ye*, Two-dimensional penta-Sn 3 H 2 monolayer for nanoelectronics and photocatalytic water splitting: a first-principles study, RSC Advances 8 (21), 2018-03-16,11799-11806. (2017 JCR Impact Factor: 2.936,Q2)
Lian Liu, Qun Yang, Zeping Wang, Huaiyu Ye*, Xianping Chen*, Xuejun Fan, Guoqi Zhang, High Selective Gas Detection for small molecules based on Germanium selenide monolayer, Applied Surface Science 433, 2018-03-01, 575-581. (2017 JCR Impact Factor: 4.439, Q1)
Cheng Qian, Amir Mirza Gheitaghy, Jiajie Fan, Hongyu Tang , Bo Sun, Huaiyu Ye*, Guoqi Zhang*, Thermal Management on IGBT Power Electronic Devices and Modules, IEEE Access, 6, 2018-01-02,12868-12884. (2017 JCR Impact Factor: 3.557, Q1)
H Tang, H Ye*, CKY Wong, SYY Leung, J Fan, X Chen, X Fan, G Zhang*, Overdriving reliability of chip scale packaged LEDs: Quantitatively analyzing the impact of component, Microelectronics Reliability 78, 2017-09-06, Vol.x, pp. 197-204. (2017 JCR Impact Factor: 1.236, Q3)
Hong-Yu Tang; H.Y. Ye*; Xian-Ping Chen; Cheng Qian; Xue-Jun Fan; Guo-Qi Zhang*, Numerical Thermal Analysis and Optimization of Multi-Chip LED Module Using Response Surface Methodology and Genetic Algorithm, IEEE Access, 2017-08-09, Vol. 5, pp. 16459 – 16468. (2017 JCR Impact Factor: 3.557, Q1)
K. Zheng, Q. Yang, C. J. Tan, H.Y. Ye* and X. P. Chen*, A two-dimensional van der Waals CdS/germanene heterojunction with promising electronic and optoelectronic properties: DFT + NEGF investigations, Physical Chemistry Chemical Physics，2017-06-26, Vol.19, pp.18330—18337. (2017 JCR Impact Factor:3.906,Q1)
H.Y. Ye*, Stanley Y. Y. Leung; Cell K. Y. Wong; Kai Lin; Xianping Chen; Jiajie Fan; Signe Kjelstrup; Xuejun Fan; Guoqi Zhang, “Thermal Inductance in GaN Devices,” IEEE Electron Device Letters, 2016-10-21, Vol. 37, pp. 1473 - 1476. (2017 JCR Impact Factor: 3.048,Q1)
Fafei Hu, Hongyu Tang, Chunjian Tan, H.Y. Ye*, Xianping Chen, Guoqi Zhang, Nitrogen Dioxide Gas Sensor Based on Monolayer SnS: A First-principles Study, IEEE Electron devices letters, 2017-05-26, Vol.38, Issue 7, pp.1-4. (2017 JCR Impact Factor: 3.433,Q1)
X.P. Chen, H.Y. Ye*, Xuejun Fan, Tianling Ren, Guoqi Zhang, “A review of small heat pipes for electronics,” Applied Thermal Engineering, 2015-11-23, Vol.96, pp.1-17. (2015 JCR Impact Factor: 3.043,Q1)
H.Y. Ye*, B. Li, H.Y. Tang, J. Zhao, C.A. Yuan, G.Q. Zhang, Design of vertical fin arrays with heat pipes used for high-power light-emitting diodes, Microelectronics Reliability, 2014-06-07, Vol. 54, Issues 11, pp. 2448-55 (2014 JCR Impact Factor: 1.433,Q2)
H.Y. Ye*, R. Sokolovskij, H.W. van Zeijl, A.W.J. Gielen, S.W.R. Lee, G.Q. Zhang, A Polymer Based Miniature Loop Heat Pipe with Silicon Substrate and Temperature Sensors for High Brightness Light-Emitting Diodes, Microelectronics Reliability, 2014-03-26, Vol.54, Issues 6-7, pp. 1355-62 (2014 JCR Impact Factor：1.433,Q2)
H.Y. Ye*, J. Wei, H.W. van Zeijl, P.M. Sarro, G.Q. Zhang, Fabrication and Application of Temperature Triggered MEMS Switch for Active Cooling Control in Solid State Lighting System, Microelectronics Reliability, 2014-03-26, Vol. 54, Issues 6-7, pp. 1338-43(2014 JCR Impact Factor: 1.433, Q2)
H.Y. Ye*, S.W. Koh, C.A. Yuan, H.W. van Zeijl, A.W.J. Gielen, S.W.R. Lee, G.Q. Zhang, Electrical-thermal-luminous-chromatic Model of Phosphor-converted White Light-Emitting Diodes, Applied Thermal Engineering, 2013-12-05, Vol. 63, Issue 2, pp.588-97. (2013 JCR Impact Factor:2.624, Q1)
H.Y. Ye*, X.P. Chen, H. van Zeijl, A.W. J. Gielen, and G.Q. Zhang, “Thermal transient effect and improved junction temperature measurement method in high-voltage light-emitting diodes,” IEEE Electron Device Letters, 2013-08-06, vol. 34, pp. 1172-1174. (2013 JCR Impact Factor：3.023,Q1)
H.Y. Ye*, M. Mihailovic, C.K.Y. Wong, H.W. van Zeijl, A.W.J. Gielen, G.Q. Zhang, P.M. Sarro, Two-phase cooling of light emitting diode for higher light output and increased efficiency, Applied Thermal Engineering, 2012-12-27, Vo.52, Issue 2, pp. 353–9. (2012 JCR Impact Factor：2.127,Q1)