Professor Guobiao Zhang graduated from the University of California, Berkeley, and is a pioneer in the field of "three-dimensional storage" and "three-dimensional computing", and proposed a number of original concepts. Professor Zhang was the chief scientist of the 3D-ROM company in the United States. He joined the Southern University of Science and Technology in January 2019 and served as a research professor at the Shenzhen-Hong Kong Institute of Microelectronics. The awards include: the first in the electronic information industry of the 4th China Innovation and Entrepreneurship Competition (2015); 106 Chinese and American authorized invention patents, including 64 US authorized invention patents and 42 Chinese authorized invention patents.
Ph.D., University of California, Berkeley, 1995
Master of Science, University of California, Berkeley, 1992
Undergraduate Chinese University of Science and Technology Junior Class 1986-1990
2019-present Research Professor, Shenzhen University of Science and Technology, Shenzhen University of Science and Technology
2001-2018 Chief Scientist, 3D-ROM Corporation, USA
1) Dr. Zhang is the inventor of 3D-ROM (the most versatile 3D-M) (1996) and obtained US Patent 5,8385,396 (1998). The patent is a basic patent for 3D-M, cited by more than half of the US patents (~500 items) in the field, and featured by EDN magazine (the world's largest electronic magazine) (2001). At present, the Zhang Guofan team has more than 60 patents entitled to effective Chinese and American patents in the 3D-M field;
2) Dr. Zhang cooperated with Matrix Semiconductor Corporation of the United States (with a total investment of 200 million US dollars) to mass produce the industry's first 3D-M product, 3D-OTP (2003). The product is used in products of Mattel and other companies, with monthly sales of one million. Matrix Semiconductor was named "Red Companies" magazine "100 Companies that will shape the future" (2002);
3) In 2015, Intel Corporation (the largest US processor) and Magnesium Corporation (the largest US memory vendor) announced that they will jointly launch 3D-XPoint storage technology, which is called "the most groundbreaking storage in the next decade." Technological innovation." Based on a preliminary analysis by TechInsights, 3D-XPoint has been proven to use at least 6 patents of the Zhang Guofan team (2017).
4) Dr. Zhang first proposed the concept of “three-dimensional computing” in the industry (PCT applications PCT/CN2017/075866, PCT/CN2017/077445 and PCT/CN2017/080462). 3D computing takes full advantage of 3D-M 3D integration and improves network security, big data analysis, artificial intelligence and super-computer performance performance by more than two orders of magnitude, and will be used in next-generation high-performance processors.
Awards & Honors
The 4th China Innovation and Entrepreneurship Competition The first place in the electronic information industry (2015)
1. G. Zhang, "3D-ROM - A First Practical Step Towards 3D-IC", Semiconductor International, July 2000
2. G. Zhang, "Improving IC Yield with Protective Ceramics", Semiconductor International, pp. 217-220, June 2000
3. G. Zhang; Y. King; S. Elfoukhy; E. Hamdy; T. Jing; P. Yu; C. Hu, "On-state reliability of amorphous silicon antifuses", Proceedings of International Electron Devices Meeting, pp. 551-554, 1995
4. Guobiao Zhang; Chenming Hu; P. Y. Yu; S. Chiang; S. Eltoukhy; E. Z. Hamdy, "An electro-thermal model for metal-oxide-metal antifuses", IEEE Transactions on Electron Devices, Volume: 42, Issue: 8, pp. 1548-1558, 1995
5. G. Zhang; C. Hu; P. Yu; S. Chiang; S. Eltoukhy; E. Hamdy, "Reliable metal-to-metal oxide antifuses", Proceedings of International Electron Devices Meeting, pp. 281-284, 1994
6. G. Zhang; C. Hu; P. Yu; S. Chiang; E. Hamdy, "Metal-to-metal antifuses with very thin silicon dioxide films", IEEE Electron Device Letters, Volume: 15, Issue: 8, pp. 310 - 312, 1994
7. G. Zhang; C. Hu; P. Yu; S. Chiang; E. Hamdy, "Characteristic voltage of programmed metal-to-metal antifuses", IEEE Electron Device Letters, Volume: 15, Issue: 5, pp. 166-168,1994
8. J. H. Huang; G. B. Zhang; Z. H. Liu; J. Duster; S. J. Wann; P. Ko; C. Hu, "Temperature dependence of MOSFET substrate current", IEEE Electron Device Letters, Volume:14, Issue: 5, pp. 268-271, 1993