Faculty

HE Hongtao
Associate Professor
0755-88018288
heht@sustech.edu.cn

Research Interests
◆Physical properties of topological insulators;
◆Transport and magnetic properties of diluted magnetic semiconductors;
◆Quantum transport in low-dimensional semiconductor structures;
◆Spin injection, transport, and detection in semiconductors;
◆Iron-based high temperature superconductors.

Educational Background
◆Ph.D., Department of Physics, Hong Kong University of Science and Technology, 2006;
◆B.S., Department of Physics, China University of Science and Technology, 2001.

Professional Experience
◆2011.08-Present, Associate Professor , Department of Physics, Southern University of Science and Technology
◆2011, Postdoctoral Fellow, Department of Physics, Hong Kong University of Science and Technology;
◆2010-2011, Research Associate, Department of Physics, Hong Kong University of Science and Technology;
◆2009-2010, Research Associate, Chinese University of Hong Kong;
◆2008-2009, Research Associate, Department of Physics, Hong Kong University of Science and Technology;
◆2006-2008, Research Assistant, Department of Physics, Hong Kong University of Science and Technology.

Honors & Awards
◆Selected candidate of Peacock-plan Award, Shenzhen.

Selected Publications
◆“Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Te3 films”, H.T. He, H.C. Liu, B.K. Li, X. Guo, Z.J. Xu, M.H. Xie, and J.N. Wang, Appl. Phys. Lett. 103, 031606 (2013).
◆“Anisotropic topological surface states on high index Bi2Se3 films”, Z.J. Xu, X. Guo, M.Y. Yao, H.T. He, L. Miao, L. Jiao, H.C. Liu, J.N. Wang, D. Qian, J.F. Jia, W.K. Ho, and M.H. Xie, Adv. Mater. 25, 1557 (2013).
◆“High-field linear magneto-resistance in topological insulator Bi2Se3 thin films”, H.T. He, B.K. Li, H.C. Liu, X. Guo, Z.Y. Wang, M.H. Xie, and J.N. Wang, Appl. Phys. Lett. 100, 032105 (2012).
◆“Impurity effect on weak anti-localization in topological insulator Bi2Te3”, H. T. He, G. Wang, T. Zhang, I. K. Sou, George K. L. Wong, J. N. Wang, H. Z. Lu, S. Q. Shen, and F. C. Zhang, Phys. Rev. Lett. 106, 166805 (2011).
◆“Systematic study of anisotropic magnetoresistance effect in (311)A GaMnAs films”, H. T. He, X. C. Cao, T. Zhang, Y. Q. Wang, and J. N. Wang, 2010, J. Appl. Phys. 107, 063902 (2010).
◆“Discrete current steps and period-adding bifurcations observed in an ac-driven GaAs/AlAs semiconductor superlattice”, H.T. He, Y.Q. Wang, W.K. Ge, and J.N. Wang, Semicond. Sci. Technol. 23, 085003 (2008).
◆“Phase-dependent bistable transitions in a weakly-coupled GaAs/AlAs superlattice”, H.T. He, Y.Q. Wang, W.K. Ge, and J.N. Wang, New Journal of Physics 10, 033019 (2008).
◆“Spectral Dependence of Spin Photocurrent and Current-Induced Spin Polarization in an InGaAs/InAlAs Two-Dimensional Electron Gas”, C. L. Yang, H. T. He, L. Ding, L. J. Cui, Y. P. Zeng, J. N. Wang, and W. K. Ge, Phys. Rev. Lett. 96, 186605 (2006).
◆“External ac-signal-controlled dynamics of electric field domains in a GaAs/AlAs superlattice”, H. T. He, Z. Z. Sun, X. R. Wang, Y. Q. Wang, W. K. Ge, and J. N. Wang, Solid State Commun. 136, 572 (2005).
◆“Resistivity minima and Kondo effect in ferromagnetic GaMnAs films”, H. T. He, C. L. Yang, X. Dai, Y. Q. Wang, W. K. Ge, and J. N. Wang, Appl. Phys. Lett. 87, 162506 (2005).

Research Projects
◆ Youth Project of National Natural Science Fund, Project Leader, 2013.01---2015.12

Other Info
Research fellow and postdoctoral positions are now open. Detail information can be found in the following link: http://talent.sustc.edu.cn/cn/jobbs.aspx?batchID=635067346000866918. Anyone interested in the positions may contact me directly.

Contacts
◆Email : heht@sustc.edu.cn
◆Tel: +86-755-88018288
◆Add: Room 227, Faculty Research Building 2, Department of Physics, Southern University of Science and Technology of China No. 1088, Xueyuan Rd., Xili, Nanshan District, Shenzhen, Guangdong, China